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| DC COMPONENTS CO., LTD. R 2N3772 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for linear amplifiers, series pass regulators, and inductive switching applications. TO-3 Pinning 1 = Base 2 = Emitter Case = Collector .135 Max (3.43) 1.573 Max (39.96) .875(22.23) .759(19.28) .450(11.43) .250(6.35) .480(12.19) .440(11.18) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (continuous) Collector Current (peak) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VCEX VEBO IC IC PD TJ TSTG Rating 100 60 80 7 30 30 150 +200 -65 to +200 Unit V V V V A A W o o .225(5.72) .205(5.20) .169(4.30) .151(3.84) .043(1.09) .038(0.97) 1.197(30.40) 1.177(29.90) .681(17.30) .655(16.64) 2 .440(11.18) 1.050(26.67) .420(10.67) 1.011(25.68) 1 Case: Collector .169(4.30) .151(3.84) C C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Emitter Sustaining Voltage (Ratings at 25 C ambient temperature unless otherwise specified) Symbol VCEO(sus) VCEX(sus) VCER(sus) ICEO Collector Cutoff Current ICEX ICBO Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain (1) (1) Min 60 80 70 15 5 2.5 0.2 40 Typ - Max 10 5 10 5 5 1.4 4 2.2 60 - Unit V V V mA mA mA mA mA V V V A MHz - Test Conditions IC=0.2A, IB=0 IC=0.2A, VBE(off)=1.5V, RBE=100 IC=0.2A, RBE=100 VCE=50V, IB=0 VCE=100V, VBE(off)=1.5V VCE=30V, VBE(off)=1.5V, TC=150 C VCB=50V, IE=0 VBE=7V, IC=0 IC=10A, IB=1.5A IC=20A, IB=4A IC=10A, VCE=4V IC=10A, VCE=4V IC=20A, VCE=4V VCE=60V, t=1.0s, Non-repetitive IC=1A, VCE=4V, f=50KHz IC=1A, VCE=4V, f=1KHz o IEBO VCE(sat)1 VCE(sat)2 VBE(on) hFE1 hFE2 Is/b fT hfe 300s, Duty Cycle 2% Second Breakdown Collector with Base Forward Bias Current Gain - Bandwidth Product Small-Signal Current Gain (1)Pulse Test: Pulse Width |
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